1.06-Micron III-V Photocathode Development.

Abstract

The design, fabrication, and evaluation of three transferred-electron (field assisted) photocathodes for high performance 1.06-micron detection are reported. The highest yields achieved at 1.06 microns were 2.7% from a InGaAsP direct emitter, 7.03% from an InP/InGaAs/InP hybrid heterojunction photocathode, and 1.05% for an all-VPE InGaP/InGaAs/GaAs heterojunction photocathode. (Author)

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Document Details

Document Type
Technical Report
Publication Date
May 01, 1979
Accession Number
ADA073224

Entities

People

  • J. S. Escher
  • P. E. Gregory
  • R. R. Saxena
  • S. B. Hyder
  • T. J. Maloney

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Antireflection Coatings
  • Band Gaps
  • Chemical Cleaning
  • Electron Emission
  • Electron Energy
  • Electronics Laboratories
  • Energy Bands
  • Epitaxial Growth
  • Fabrication
  • Materials
  • Materials Processing
  • Monte Carlo Method
  • P-N Junctions
  • Quantum Efficiency
  • Quantum Yields
  • Scattering
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Electronics Engineering
  • Optical Physics and Photonics.

Technology Areas

  • Microelectronics