Study of the Physics of Insulating Films as Related to the Reliability of Metal-Oxide Semiconductor Devices

Abstract

These papers discuss the effects of radiation, Heat treatment, Thickness, Measuring temperature, impurity content on the electron trapping characteristics of Si02. The results of a comprehensive study of the photo conductivity and photo transmission of Si02 are also included that make it possible to determine the band gap. The generation of donor states near the Si- Si02 interface is described with a discussion of two alternate mechanisms involving excitons or hydrogen diffusion.

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1979
Accession Number
ADA073300

Entities

People

  • D. J. Dimaria
  • E. Bassous
  • G. W. Rubloff
  • J. M. Aitken
  • Z. A. Weinberg

Organizations

  • IBM Thomas J. Watson Research Center

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Absorption Coefficients
  • Band Gaps
  • Band Structures
  • Conduction Bands
  • Energy Bands
  • Fabrication
  • Field Effect Transistors
  • Ionizing Radiation
  • Measurement
  • Optical Materials
  • Refractive Index
  • Semiconductor Devices
  • Semiconductors
  • Silicon Dioxide
  • Spectra
  • Spectroscopy
  • X Rays

Fields of Study

  • Materials science
  • Physics

Readers

  • Business Analytics
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene