Annealing of Ion-Implanted Silicon by an Incoherent Light Pulse.

Abstract

Annealing of boron-implanted silicon by a single 15-microsecond pulse from a flash lamp has been observed. The required energy density was 27 joules per square centimeter incident on the silicon. Electrical activity of boron was comparable to that in thermally annealed samples. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1979
Accession Number
ADA073495

Entities

People

  • H. A. Bomke
  • H. L. Berkowitz
  • M. Harmatz
  • R. Lux
  • S. Kronenberg

Organizations

  • United States Army Communications-Electronics Command

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Absorption Coefficients
  • Annealing
  • Electronics
  • Flash Lamps
  • Heat Loss
  • Hot Gases
  • Lamps
  • Light Pulses
  • Materials
  • Measurement
  • Melting
  • Melting Point
  • New Jersey
  • Resistance
  • Semiconductors
  • Shock Waves

Fields of Study

  • Physics

Readers

  • Pulsed Power and Plasma Physics.
  • Semiconductor Device Technology