Metal-Nitride-Oxide-Semiconductor (MNOS) Radiation Characterization Studies.

Abstract

This report describes the Radiation Characterization studies performed at the Air Force Weapons Laboratory (AFWL) on Metal-Nitride-Oxide-Semiconductor (MNOS) transistors, arrays, and related PMOS devices during the period of March 1972 to September 1978. The work presented shows the radiation test data, testing, techniques, and radiation hardening ideas which assisted AFWL in the development of a radiation hard, monolithic, PMOS/MNOS RAM array (the Sperry Rand SR2256). (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1979
Accession Number
ADA073637

Entities

People

  • Roger W. Tallon

Organizations

  • Air Force Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics
  • Space
  • Weapons Technologies

DTIC Thesaurus Topics

  • Electronics
  • Electrons
  • Energy
  • Fabrication
  • Hardening
  • Ionizing Radiation
  • Materials
  • Materials Laboratories
  • Memory Devices
  • Metal Nitride Oxide Semiconductors
  • Metal Oxide Semiconductors
  • Nuclear Radiation
  • Radiation Effects
  • Semiconductors
  • Test And Evaluation
  • Test Facilities
  • Test Methods

Readers

  • Aerospace Test and Evaluation
  • Nuclear and Radiation Engineering.
  • Snow Cover Descriptors for Reptiles and Their Illustrations.

Technology Areas

  • Microelectronics