Dipolar Defect Structure of Laser and Other Transparent Materials.
Abstract
The dipolar defects resulting from rare-earths doped in alkaline earth fluorides have been measured by the method of dielectric relaxation. These measurements have been made over the temperature range 5K to 400 K and, in some cases, as a function of pressure. New relaxation peaks were discovered, particularly at low temperatures. The strengths of the various defects did not scale monotonically with dopant concentration. Measurements on crystals with two or more dopants enabled a positive identification of clustering. Studies were also carried out on alkaline earth fluorides doped with alkali metals, a series of optical glasses, and some semiconductors. A microprocessor controlled automatic capacitance bridge was developed and constructed and is operational. Advancements were made on the high pressure dielectric gauge. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 15, 1979
- Accession Number
- ADA073815
Entities
People
- Carl Andeen
- Donald E. Schuele
Organizations
- Case Western Reserve University