Electrical and Optical Properties of High Purity p-Type Single Crystals of GeFe204.

Abstract

Single crystals of the spinel GeFe204, grown by the chemical vapor transport technique, are p-type semiconductors with an acceptor ionization energy of 0.39 eV. The material is a heavily compensated band-type semiconductor, with a typical hole concentration of 3/10 to the 14 power cm near room temperature, and a temperature independent Hall mobility of 2 sq cm/Vs. Optical absorption measurements show the optical band gap to be 2.3 eV; the octahedral field splitting of the Fe(2+) d-levels is 10200 1/10200 cm. Magnetic measurements show that n(eff) is 5.26, from which a trigonal field splitting of 1/950 cm is derived. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1979
Accession Number
ADA073998

Entities

People

  • Aaron Wold
  • Frank P. Koffyberg
  • Pierre Strobel

Organizations

  • Brown University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Absorption
  • Band Gaps
  • Chemistry
  • Crystal Structure
  • Diffraction
  • Electrical Properties
  • Energy Bands
  • Hall Effect
  • Ionization
  • Materials
  • Measurement
  • Military Research
  • Optical Absorption
  • P Type Semiconductors
  • Semiconductors
  • Solid State Physics
  • Spin-Orbit Interaction

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.

Technology Areas

  • Microelectronics