Research on Low Temperature, Directed Energy Processing of Very Large Scale Integrated Structures
Abstract
The goal of this research program is to demonstrate processing techniques which can eliminate the need for high temperature thermal cycling of silicon wafers in fabricating very large scale integrated (VLSI) devices. Maintaining low temperatures for all processing reduces plastic deformation, diffusion and autodoping problems which would limit the application of submicron geometry design rules. Pulsed electron beam surface heating of the top micron of material is being investigated for annealing of ion-implantation damage and epitaxial regrowth of low temperature chemical-vapor-deposition (CVD) polycrystalline silicon films. Initial research has demonstrated the epitaxial regrowth of 0.3 micron films deposited at 800 degrees C. Annealing of ion- implantation damage typical of buried layer applications has also been demonstrated. Effective uniformity of processing has been improved to + or - 4 percent in one (electron beam) pulse covering the surface of a 3-inch-diameter wafer. Research planned in the next 6 months will stress lower deposition temperatures and pulsed nonmelting techniques for annealing implantation damage. The program is about 2 months ahead of schedule.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1979
- Accession Number
- ADA074127
Entities
People
- Anton Greenwald