Study of Electronic Transport and Breakdown in Thin Insulating Films
Abstract
Recent progress is reported in an ongoing program of studies of high- field effects in thin insulating films on semiconducting substrates. The investigations reported here include further studies of the high-field generation of interface states in the Si-SiO2 system, a comparison between the effects of ionizing radiation and high-field stress in generating interface states in MOS capacitors, and a study of the characteristics of charge trapping in CVD Al2O3 on silicon.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1978
- Accession Number
- ADA074457
Entities
People
- Walter C. Johnson
Organizations
- Princeton University