Indium Phosphide Gunn Devices (26-60GHz).

Abstract

The program described is directed to the development of InP material and devices for low noise, broad bandwidth amplifier operation in the 26.5 to 40.0 and 40.0 to 60.0 GHz bands. Final objectives are low noise amplifiers covering the 26.5 to 40.0 GHz and low noise amplifiers with bandwidth greater than 10% covering the 40.0 to 60.0 GHz band. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Aug 15, 1979
Accession Number
ADA074549

Entities

People

  • B. R. Cairns
  • J. D. Crowley
  • S. B. Hyder

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Amplifiers
  • Bandwidth
  • Electric Fields
  • Energy Bands
  • Fabrication
  • Frequency
  • Gunn Diodes
  • Heat Sinks
  • Insertion Loss
  • Ka Band
  • Low Noise
  • Materials
  • Measurement
  • Millimeter Waves
  • Noise
  • Semiconductor Devices
  • Semiconductors

Readers

  • Electronics Engineering
  • Semiconductor Device Technology