Development of Charge Transfer Devices for 1-2 Micron Imaging.

Abstract

There is considerable interest in the development of an imaging system within the wavelength range of 1.0 - 1.8 micrometers. The concept of charge coupled devices emerges as one of the viable candidates for such an application. The advantages of a non-MIS, Schottky barrier, buried channel CCD are discussed. A suitable material system for the 1.0 - 1.8 micrometers CCd application is the n-GaA1Sb/p+-GaSb hetero-system. Substantially improved surface morphology for this system is reported. This is achieved by the addition of As to the GaA1Sb layer, thus forming the quaternary: GaA1AsSb. Characterization of Schottky barriers to this material are reported. the Schottky barrier height is found to be >0.7 eV. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Nov 01, 1978
Accession Number
ADA074632

Entities

People

  • Ira Deyhimy

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Charge Coupled Devices
  • Cloud Cover
  • Coefficients
  • Dielectrics
  • Electronics Laboratories
  • Epitaxial Growth
  • Guard Rings
  • Liquid Phase Epitaxy
  • Materials
  • Measurement
  • Metal-Semiconductor Junctions
  • Night Vision
  • P-N Junctions
  • Phase Diagrams
  • Photonic Metamaterials
  • Semiconductors
  • Transition Temperature

Fields of Study

  • Materials science

Readers

  • Image Processing and Computer Vision.
  • Systems Analysis and Design
  • Thin Film Deposition Science.