Development of Charge Transfer Devices for 1-2 Micron Imaging.

Abstract

There is considerable interest in the development of an imaging system within the wavelength range of 1.0 -1.8 micron. The concept of charge coupled devices emerges as one of the viable candidates for such an application. The advantages of a non-MIS, Schottky barrier, buried channel CCD, are discussed. Various configurations for backside illuminated devices are considered. The simplest representative configuration for evaluation of the concept consists of Schottky gates deposited on an active n-type channel supported by a p-type substrate. Analysis of the CCD shows that the optimum gap spacing is about 1 micron between gate electrodes to insure high charge transfer efficiency. Efforts in both materials growth and processing aimed at the development of this device are reported. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Feb 01, 1978
Accession Number
ADA074641

Entities

People

  • I. Deyhimy
  • J. S. Harris
  • K. Wong

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Charge Coupled Devices
  • Charge Transfer
  • Electronics Laboratories
  • Electrons
  • Focal Planes
  • Generators
  • Heat Energy
  • Latent Heat
  • Liquid Phase Epitaxy
  • Liquid Phases
  • Long Wavelengths
  • Materials
  • Metal-Semiconductor Junctions
  • Night Vision
  • Optical Detectors
  • Phase Diagrams
  • Semiconductors

Readers

  • Semiconductor Device Technology
  • Structural Dynamics.

Technology Areas

  • Space