Topographic Examination of Semiconductor Systems.

Abstract

Using the electrolyte electroreflectance (EER) technique, a systematic characterization of GaAs and InP as well as quaternary alloy InGaAsP has been made. Those materials grown at the Naval Research Laboratory include unimplanted samples and those implanted with Be, Se, and Si ions. Besides topographic examination of uniformity of carrier concentration, the spectra have been analyzed and effects of implantation and anneal procedures on the transition energies have been examined. The results of characterization have been provided as feed back information for the materials growth program at NRL. EER technique is shown to be an unusually sensitive tool in the characterization of these semiconducting materials. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1979
Accession Number
ADA075007

Entities

People

  • P. M. Raccah
  • R. L. Brown
  • S. Sundaram

Organizations

  • University of Illinois at Chicago

Tags

Communities of Interest

  • Energy and Power Technologies
  • Weapons Technologies

DTIC Thesaurus Topics

  • Band Structures
  • Cells
  • Electrolytic Cells
  • Electronics
  • Energy Bands
  • Energy Gaps
  • Experimental Data
  • Ion Implantation
  • Light Sources
  • Measurement
  • Metal-Semiconductor Junctions
  • Military Research
  • Molecular Beams
  • Optoelectronic Devices
  • Semiconductors
  • Spectra
  • Transitions

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics