GaAs Monolithic Microwave Subsystem Technology Base
Abstract
In the materials area, effort on this program during the first six months has been devoted to process technology development, and materials study and qualification. Equipment delays and malfunctions have limited progress however, direct implants and implants into both VPE and LPE were investigated with encouraging results. Investigation of self aligned gate FET's have shown high gate resistance and feedback capacitance, and corresponding low grain, resulting in a decision to revert to realized gate FET's. Interdigital capacitors with values up to 2 pf have been fabricated for use as tuning capacitors. A one bit phase shifter has been designed using lumped elements and Schottky barrier chip diodes. Testing was delayed however by a mask error which is being corrected.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1979
- Accession Number
- ADA075287
Entities
People
- D. W. Maki
- J. Oakes