Preparation and Photoelectronic Properties of n-Type Cd2GeO4.

Abstract

Cd2Geo4 crystallizes with an orthorhombic structure space group Pbnm (a=5.20,b-11.14,c-6.57A) as determined by the onset of photocurrent, the flat band potential is -0.80(5)V vs SCE. An indirect band gap at 3.15(5) eV and a direct band gap at 4.15(5) eV were ascertained from measurement of the photoelectronic quantum efficiency. Despite some initial loss in the photo-response during the first hour of irradiation at 1.0 W/cm2, Cd2Geo4 has been shown to be far more stable as an electrode than Cd2SnO4. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Nov 01, 1979
Accession Number
ADA075451

Entities

People

  • Aaron Wold
  • Kirby Dwight
  • Robert N. Kershaw
  • S. N. Subbarao
  • V. S. Nguyen

Organizations

  • Brown University

Tags

Communities of Interest

  • Advanced Electronics
  • Weapons Technologies

DTIC Thesaurus Topics

  • Band Gaps
  • Chemical Synthesis
  • Chemistry
  • Decomposition
  • Electrodes
  • Electronics
  • Electrons
  • Energy Bands
  • Materials
  • Military Research
  • New York
  • Rhode Island
  • Semiconductors
  • Transition Metals
  • United States
  • Universities
  • Virginia

Fields of Study

  • Materials science

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