GaAs Surface Effects.
Abstract
This report presents the results of the first six months of a program to investigate the passivation of GaAs surfaces using a native insulator. Ion implantation of phosphorus and subsequent oxidation of the surface was used to form the insulator. Post-implant annealing indicates that Chemical Vapor Deposition SiO2 has somewhat better encapsulating properties than sputtered Si3N4. It was found that high-dose phosphorus implantation significantly reduces decomposition of the semiconductor surface under the SiO2 encapsulant during high-temperature annealing. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1979
- Accession Number
- ADA075478
Entities
People
- Gordon J. Kuhlmann