GaAs Surface Passivation for Device Applications.

Abstract

This report describes the initial stages of a program to develop deposited dielectrics for GaAs device applications. Three applications of the dielectrics are being investigated: (1) isolation of control electrodes, (2) passivation of the GaAs surface, and (3) encapsulation of completed circuits. The dielectrics being studied include silicon oxynitride; mixtures of silicon nitrode and germanium nitride; and mixtures of silicon dioxide, gallium oxide, and aluminum oxide. Deposition techniques being employed are pyrolytic chemical vapor deposition, plasma-enhanced deposition, and photochemical deposition. This report describes the apparatus being used for this program and the chemical analysis of preliminary films deposited. No interface state measurements are reported. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1979
Accession Number
ADA075479

Entities

People

  • C. L. Anderson
  • J. W. Peters
  • M. D. Clark

Organizations

  • HRL Laboratories

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Aeronautical Laboratories
  • Air Force
  • Aluminum Oxides
  • Base Pressure
  • Ceramic Materials
  • Chemical Reactions
  • Chemical Vapor Deposition
  • Dielectrics
  • Flow
  • Gas Flow
  • Germanium
  • Germanium Compounds
  • Mass Flow
  • Oxides
  • Radio Frequency Power
  • Silicon
  • Silicon Compounds

Fields of Study

  • Materials science

Readers

  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene