Enhanced Heteroepitaxy.
Abstract
Uniform crystallographic orientation of silicon films, 500 nanometers thick, has been achieved on amorphous fused silica substrates by laser crystallization of amorphous silicon deposited over surface-relief gratings etched into the substrates. The gratings had a square-wave cross section with a 3.8 micrometers spatial period and a 100-nanometers depth. The less than 100 more than directions in the silicon were parallel to the grating and perpendicular to the substrate plane. We propose that orientation of overlayer films induced by artificial surface patterns be called graphoepitaxy. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 31, 1978
- Accession Number
- ADA075514
Entities
People
- Alan L. McWhorter
Organizations
- Massachusetts Institute of Technology