Broadband GaAs MESFET Power Amplifier Design Aspects.

Abstract

This report presents design aspects of ultra-wideband GaAs MESFET power amplifiers which are directed to ECM and EW system applications. Fundamental gain-bandwidth limitations are derived for state-of-the-art GaAs MESFET power devices. Broadband designs are developed in the 2- to 18-GHz range using analytical and computer-aided optimization techniques. These designs are based upon small-and large-signal device characterization and modeling. Presented are systematic procedures required to arrive at the final designs. Modeling techniques and their utilization as a tool in achieving optimum performance are described. Included in this report is a discussion of the laboratory methods employed to perform small-and large-signal device characterization and analysis. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Oct 12, 1979
Accession Number
ADA075692

Entities

People

  • H. A. Willing
  • W. H. Ku

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Amplifiers
  • Bandwidth
  • Broadband
  • Cell Size
  • Computer-Aided Design
  • Electrical Engineering
  • Field Effect Transistors
  • Frequency
  • Gain
  • Ice
  • Measurement
  • Military Research
  • Power Amplifiers
  • Power Gain
  • Test Fixtures
  • Topology
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Electronics Engineering
  • Systems Analysis and Design