Fabrication and Electrical Properties of Epitaxial PbTe Metal-Insulator-Semiconductor Structures.
Abstract
Methods for the fabrication of metal insulator semiconductor structures with the use of epitaxial PbTe films are described. These methods obviate the need for treating the semiconductor surface. They involve epitaxial film growth in a vacuum environment by hot-wall epitaxy followed by (1) deposition of ZrO2 without breaking vacuum and (2) deposition of pyrolytic SiO2. Capacitance-voltage characteristics in both cases closely correspond to theoretical values. Depletion layer generation is shown to be the dominant contribution to the inversion conductance. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 30, 1979
- Accession Number
- ADA075776
Entities
People
- D. E. Joslin
- M. E. Mathews
- P. H. Zimmermann
Organizations
- The Aerospace Corporation