Growth of HgCdTe by Modified Molecular Beam Epitaxy
Abstract
This is the first semi-annual technical report of a program to study a novel approach to the epitaxial growth of HgCdTe. In this report, we describe the general approach in detail. We have also completed the assembly and test of the main chamber. In addition, we also made extensive literature survey on the subject of laser evaporation and estimated the growth.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 28, 1979
- Accession Number
- ADA075836
Entities
People
- J. T. Cheung