High-Energy Ion Implantation for Multigigabit-Rate GaAs Integrated Circuit.
Abstract
The program objectives are: study of high-energy (about 1 MeV) ion implantation of donors into GaAs for multigigabit-rate integrated-circuit development and annealing of implanted GaAs using high-power lasers to remove lattice damage and activate implanted donors. Results obtained are: We have investigated implantation of 28Si(+) into semi-insulating GaAs with implant energies ranging from 40 keV to 1.2 MeV; we have analyzed the profiles and range statistics of 28Si-implanted GaAs with energies of up to 1.2 MeV using (Secondary Ion-Mass Spectroscopy) SIMS; we have investigated laser-annealing of high-dose Si-implanted GaAs using both a high-power Nd:glass laser and a ruby laser; optical absorption in Si-implanted GaAs wafers irradiated with high-power Nd:glass laser pulses has been studied; impurity distribution in as-implanted, thermally annealed, and laser-annealed samples has been investigated by SIMS; and investigation of 28Si(+) implantations in GaAs at the low-implant energy (<300 keV) shows that the electron concentration attained has an upper limit at the high-dose region and a lower limit at the low-dose region following thermal annealing.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1979
- Accession Number
- ADA076237
Entities
People
- C. P. Wu
- E. C. Douglas
- S. G. Liu
Organizations
- Sarnoff Corporation