Electrooptical Devices.

Abstract

This report covers work carried out with support of the Department of the Air Force during the period 1 October 1978 through 31 March 1979. The current objectives of the electrooptical device program are: (1) to perform life tests on GaInAsP/InP double-heterostructure (DH) diode lasers operating in the 1.0- to 1.3-micrometer wavelength region and analyze the degradation mechanisms, and (2) to fabricate and study avalanche photodiodes of similar composition GaInAsP operating in the same wavelength region.

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Document Details

Document Type
Technical Report
Publication Date
Mar 31, 1979
Accession Number
ADA077153

Entities

People

  • Charles E. Hurwitz

Organizations

  • Massachusetts Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Abstracts
  • Air Force
  • Avalanche Photodiodes
  • Coefficients
  • Degradation
  • Diodes
  • Electric Fields
  • Electronics Laboratories
  • Electrons
  • Ionization
  • Laser Diodes
  • Lasers
  • Life Tests
  • P-N Junctions
  • Photodiodes
  • Repetition Rate
  • Semiconductors

Readers

  • Semiconductor Device Technology
  • Technical Research and Report Writing.

Technology Areas

  • Directed Energy