I /J Band Low-Cost Crossed-Field Amplifier.
Abstract
This program is directed toward development of an I/J band, linear format, injected-beam crossed-field amplifier (IBCFA) for electronic warfare. The IBCFA should be capable of power output of 1000W peak, 200W average, between 8.5 and 17 GHz with 20 dB gain. A laser-cut shaped-substrate meander line is to be used. E/F band IBCFA's are to be built and evaluated for electronic warfare applications: 3 kW peak pulse power and 1 kW average power output, 20 dB gain, 2-4 GHz; and for phased-array radar, 2 kW peak pulse power output at 10-15% duty, 25 dB gain, 3.0-3.6 GHz. Objective specifications for I/J-band devices are 1 kW peak pulse power and 200W average power output, 20 dB gain, 8.5-17 GHz. A previously built E/F-band CFA with laser-cut substrate was tested to determine its performance with respect to the phased array requirements. It was concluded that additional circuit length is required for increased gain. In addition, it will be desirable to add attenuation in the small-signal part of the tube to improve stability in the electronic warfare mode. A first round of I/J-band large-signal calculations was performed. It was concluded that a circuit pitch of 0.014 in. is desirable, and that cathode-to-ground voltage should be about 6500 V.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1979
- Accession Number
- ADA077322
Entities
People
- Robert R. Moats