The Electrical Switching Properties of Amorphous Bismuth Trioxide Thin Film Devices.

Abstract

Many gold-amorphous bismuth trioxide-gold layered devices, known as Bi-O-Trons were fabricated and their switching properties were investigated. The Bi-O-Trons were made by direct vacuum deposition. A unique microprocessor controlled measurement method was developed. This report also contains evidence that filaments can be formed by exclusively thermal effects. Also, evidence that suggests an electrothermal model of threshold switching is presented and discussed. Finally a conclusion about the possibility of the immediate application of Bi-O-Trons as memory cells is presented. (Author)

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Document Details

Document Type
Technical Report
Publication Date
May 09, 1979
Accession Number
ADA077662

Entities

People

  • R. Stephen Weis

Organizations

  • United States Naval Academy

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Amorphous Materials
  • Computer Programs
  • Computers
  • Conductivity
  • Converters
  • Electrical Properties
  • Fabrication
  • Films
  • Materials
  • Materials Processing
  • Measurement
  • Photographs
  • Photography
  • Thin Films
  • United States Naval Academy
  • Vacuum Deposition
  • Voltage

Readers

  • Integrated Circuit Design and Technology.
  • Thin Film Deposition Science.