Final State Correlation Effects in Auger Lineshapes; Application to Silicon Dioxide.

Abstract

Final state correlation effects in Auger lineshapes are considered within the cluster LCAO-MO-CI theory with a parameterized Hamiltonian. A model problem is solved analytically to elucidate the role of final state hole-hole correlation and to understand the localization of the holes on rather small subclusters of the system. The relationship of the correlation effects to the relative magnitudes of the one-center hole-hole repulsion u and the Bandwidth gamma has been previously reported; however, this previous work has been limited to metallic single element conductors. This work extends the theory to covalently bonded insulators (and possibly semiconductors) consisting of more than one element. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Nov 01, 1979
Accession Number
ADA078037

Entities

People

  • David E. Ramaker

Organizations

  • George Washington University

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Space

DTIC Thesaurus Topics

  • Atomic Orbitals
  • Auger Electrons
  • Chemistry
  • Crystal Structure
  • Electron Energy
  • Electrons
  • Energy Bands
  • Engineering
  • Equations
  • Materials
  • Materials Science
  • Military Research
  • Mining Engineering
  • Molecular Orbital Theory
  • New York
  • Solid State Physics
  • X Rays

Fields of Study

  • Physics

Readers

  • Molecular Photonics/Laser Physics
  • Quantum Chemistry
  • Theoretical Analysis.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene