InGaAsP Quaternary Materials for Near Infrared Detector and Laser Applications
Abstract
The study of the influence of different parameters on the growth of InP using the hydride growth technique has been continued. This work is to be presented at the 156th Electrochemical Society Meeting, Los Angeles, 1979, and an abstract is included with the reprints/preprints at the end of this report. Because of moisture damage and contamination sustained during a flood this summer, it was decided to implement the new automatic gas flow control system described in the last report as soon as possible. The old system has been disassembled and heliarc welding on the new system is progressing rapidly. Included at the end of this report are some reprints of papers that have been received since the last report and some preprints and abstracts of more recent work.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1979
- Accession Number
- ADA078320
Entities
People
- G. E. Stillman
- N. Holonyak Jr.
Organizations
- University of Illinois Urbana–Champaign