Process Variable Dependence and Interrelationship between Avalanche Injected and Radiation Induced Carrier Trapping in Thermal Oxides.

Abstract

Progress to data includes the completion of the automated avalanche carrier injection and trapping system, the preparation of samples to study hole and electron trapping in dry as well as wet oxides, and the measurements of the effects of various process parameters on the trapping characteristics of thermal silicon dioxide.

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1979
Accession Number
ADA078362

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Annealing
  • Charge Density
  • Current Density
  • Electrons
  • Low Temperature
  • Measurement
  • Military Research
  • Nitrogen
  • Oxidation
  • Oxides
  • Plastic Explosives
  • Radiation
  • Silicon
  • Silicon Dioxide

Readers

  • Business Analytics
  • Plasma Physics.
  • Surface Engineering/Surface Coating Technology.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene