Thin Film Annealing by Ion Bombardment
Abstract
The enhancement of film adherence resulting from argon ion bombardment during the evaporation procedure has been studied experimentally. The observations point to the existence of an annealing effect caused by atomic rearrangement in bombardment induced temperature spikes. This mechanism begins to be effective at a critical minimum bombardment the deposited material is subjected to rearrangement soon after it has condensed. The small amount of argon incorporated into the film by the bombardment is shown to have on significant influence on the process.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1979
- Accession Number
- ADA078398
Entities
People
- E. H. Hirsch
- I. K. Varga