Monolithic Microwave Preamplifier.
Abstract
During the initial phase of this contract, TRW developed a computer model for GaAs Microwave Field-Effect Transistors, in order to study the noise and gain properties of such devices for different channel doping densities and geometry configurations. This model has proven to be accurate when compared against measured results of noise figure, S parameters, and temperature effects on noise figure of FET devices. At the present, TRW has made use of this computer model in designing a low noise integrated preamplifier to operate at X-band. The theoretical design of this amplifier is the subject of the present report. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1979
- Accession Number
- ADA078522
Entities
People
- A. Benavides
- K. Weller
- R. Kaelberer