Optical-Microwave Interactions in Semiconductor Devices.
Abstract
GaAs FETs and Gunn diodes with built-in optical waveguides are being developed. The purpose is to allow optical signals to be coupled into the active region of the devices efficiently. These FETs will be useful for optical mixing, optical injection locking, and optical detection purposes. The Gunn diodes will be used for high-speed pulsed nodulation of injection lasers. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1979
- Accession Number
- ADA078538
Entities
People
- C. Slayman
- H. W. Yen
- L. Figueroa
Organizations
- HRL Laboratories