The Measurement of Temperature Instabilities and Their Effect on the Liquid Phase Epitaxial Growth of Gallium Arsenide

Abstract

Epitaxial layers grown on gallium arsenide substances using the steady state temperature gradient form of liquid phase epitaxy have a much larger growth rate than that calculated for diffusion-limited conditions. In addition, and of major importance for device fabrication, there is a large variation in epilayer thickness over the surface of a single sample, and non-reproducibility from sample to sample. The present report describes various measurements of the temperature and its local variation within the gallium melt solution, and attempts to relate the observed variations and instabilities to the epitaxial layers actually grown.

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Document Details

Document Type
Technical Report
Publication Date
Aug 01, 1979
Accession Number
ADA078638

Entities

People

  • M. Folkard

Tags

Communities of Interest

  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Chemical Compounds
  • Crystal Growth
  • Department Of Defense
  • Electronics
  • Epitaxial Growth
  • Gallium
  • Gallium Arsenides
  • Instability
  • Liquid Phase Epitaxy
  • Liquid Phases
  • Liquids
  • Measurement
  • Phase
  • Steady State
  • Temperature Gradients
  • Transition Temperature

Readers

  • Atmospheric Science / Meteorology, specifically Wind Wave Turbulence.
  • Semiconductor Device Technology
  • Surface Engineering/Surface Coating Technology.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene