Process Variable Dependence and Interrelationship between Avalanche Injected and Radiation Induced Carrier Trapping in Thermal Oxides.
Abstract
This is the first quarterly report on the ARPA sponsored project titled 'PROCESS VARIABLE DEPENDENCE AND INTERRELATIONSHIP BETWEEN AVALANCHE INJECTED AND RADIATION INDUCED CARRIER TRAPPING IN THERMAL OXIDES.' This program is carried out in cooperation with the Naval Research Laboratory in Washington, DC. Progress to date includes the modification of our present computerized C-V analysis system to allow for automated avalanche carrier injection measurements and data reduction as well as the preparation of the first group of samples to be used in the program. The modifications proposed for our computerized C-V quasi-static system to convert it to an automated avalanche carrier injection trapping system have been carried out. N-type (111) silicon wafers, resistivity 0.2-0.3 ohm-cm, and p-type (111) wafers resistivity 0.4-0.7 ohm-cm were oxidized in dry O2 at 900, 1000, and 1100 C to an oxide thickness of approximately 800 A.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1979
- Accession Number
- ADA079281
Entities
People
- Bruce E. Deal