Evaluation of Gallium Nitride for Active Microwave Devices.
Abstract
Planar single crystal layers of GaN that are almost defect free and completely transparent can now be grown routinely by CVD on basal plane sapphire substrates. The native shallow donor density still remains high (ten to the 18 th power - ten to the 19th power/cc) unaltered by growth under varying Ga:N ratios, but decreasing somewhat with increased growth rate. The results of growth under N2 at high pressures are inconclusive at present. Doping with Ge or C during growth does not compensate the donor. Low temperature photoluminescence studies of proton implanted samples and of samples grown in the absence of H2 provide additional evidence that the shallow donor is not associated with H. Work is in progress to interpret much fine structure observed in the luminescence spectra, to complete the identification and characterization of donors and acceptors introduced by ion implantation and to observe any effects on the native donor density caused by the implantation of Ga and of N. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1979
- Accession Number
- ADA079319
Entities
People
- M. Gershenzon
Organizations
- University of Southern California