Processing Research on Chemically Vapor Deposited Silicon Nitride.

Abstract

Processing research during this contract phase has explored the deposition kinetics of silicon nitride with a variety of furnace designs and silicon:nitrogen precursors including variations in the usual thermodynamic variables of pressure, temperature, flow rate and reactant concentrations. Two specific processes have been identified for forming flat plate and figured geometries in a 'hot-wall' reactor. In addition, a set of process conditions have been identified for forming flat plate material of comparable physical properties in a 'cold-wall' reactor at significantly higher deposition rates. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1979
Accession Number
ADA079328

Entities

People

  • C. Dulka
  • J. D'andrea
  • J. J. Gebhardt
  • J.D. Hanson
  • R. A. Tanzilli

Organizations

  • General Electric

Tags

Communities of Interest

  • Advanced Electronics
  • Ground and Sea Platforms
  • Weapons Technologies

DTIC Thesaurus Topics

  • Ceramic Materials
  • Chemical Reactions
  • Chemical Vapor Deposition
  • Crystal Lattices
  • Crystal Structure
  • Crystallography
  • Crystals
  • Flow Rate
  • Materials
  • Materials Laboratories
  • Materials Science
  • Mechanical Properties
  • Mechanics
  • Military Research
  • Optical Properties
  • Physical Properties
  • Physics Laboratories

Readers

  • Metallurgy
  • Thin Film Deposition Science.