Dielectric Layers on III-V Semiconductors.

Abstract

Dielectric layers, particularly SiO2, Si3N4, and AlN, have been deposited on GaAs and other compound semiconductors for several purposes: (1) study of MIS structures, (2) encapsulation during annealing, and (3) electronic profiling of epitoxial layers. Development of the ion beam sputtering technique has paralleled the dielectric studies. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1979
Accession Number
ADA079637

Entities

People

  • James R. Sites.

Organizations

  • Colorado State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Charge Carriers
  • Chemistry
  • Compound Semiconductors
  • Dielectrics
  • Electron Density
  • Energy Bands
  • Epitaxial Growth
  • Heat Treatment
  • Ion Beams
  • Ions
  • Measurement
  • Refractive Index
  • Semiconductor Devices
  • Semiconductors
  • Silicon Compounds
  • Spectra

Fields of Study

  • Materials science

Readers

  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene