Quaternary Alloy Microwave MESFET.
Abstract
Liquid phase epitaxial growth techniques have been used to grow quaternary alloys, Ga sub 1-x In sub x P sub 1-y As sub y, on InP substrates, using (100), (111) A and (111) B orientations. Liquidus and solidus data at 660 C have been used to determine distribution coefficients for P, As, and Ga in the melt. Compositions lattice matched to InP have been grown as single crystals. A preliminary X-ray evaluation of structure shows no detectable long-range ordering. Best electronic properties to date have been a Hall mobility of 4000 sq cm/V-sec at room temperature with a carrier concentration of 3.8 times ten to the 16th power per cc in material which has not been intentionally doped. Deposition of gold contacts on alloy samples yielded nonlinear current-voltage characteristics, but with poorly defined barriers. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 30, 1979
- Accession Number
- ADA079646
Entities
People
- G. Kelner
- H. H. Stadelmaier
- J. W. Harrison
- M. A. Littlejohn
- S. B. Phatak
Organizations
- RTI International