Indium Phosphide for High Frequency Power Transistors

Abstract

This report covers the first year of studies aimed at determining the utility of InP for fabricating power microwave field effect transistors (FET). The initial phase of the work was concentrated on developing the technology necessary to complete a power FET based on current design philosophy. Ion implantation and vapor phase epitaxy (VPE) results are presented as a means for providing an active channel for the device. Further work is planned for VPE channels because of the potential benefits of buffer layers under development. Processing technology (etching, ohmic contacts) is reviewed. In addition, a review of gate technology is provided since this is the largest technology issue for the InP FET. The results of the gate studies has been a concentration of effort on developing a JFET during the conclusion of the program.

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Document Details

Document Type
Technical Report
Publication Date
Sep 25, 1979
Accession Number
ADA079812

Entities

People

  • G. W. Eldridge
  • M. C. Driver
  • R. C. Clarke
  • V. L. Wrick

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Alcohols
  • Electron Mobility
  • Electronics Laboratories
  • Electrons
  • Fabrication
  • Field Effect Transistors
  • Ion Implantation
  • Materials
  • Measurement
  • Metal-Semiconductor Junctions
  • Military Research
  • P-N Junctions
  • Power Electronics
  • Resistance
  • Semiconductors
  • Transistors
  • Vapor Phases

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Systems Analysis and Design