Research on Microwave Junction Gate Field Effect Transistors.

Abstract

This program has considered basic problems in the fabrication of junction-gate FET devices. We have shown that Ga(x)In(1-x)As layers can be grown of the appropriate composition (x = 0.468 + or - 3%) required to obtain a good lattice match to indium phosphide substrates. Additionally, techniques have been developed for in-situ etch of substrates prior to epitaxial growth. Diffusion and masking techniques have been developed for making junctions with no enhanced lateral diffusion. These diffusions are carried out in the absence of an arsenic overpressure, and are limited to n-type layers at the present time. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Dec 19, 1979
Accession Number
ADA080031

Entities

People

  • S. K. Ghandhi

Organizations

  • Rensselaer Polytechnic Institute

Tags

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Diffusion
  • Electronics
  • Electronics Industry
  • Epitaxial Growth
  • Fabrication
  • Field Effect Transistors
  • Materials
  • Microwaves
  • Military Research
  • New York
  • Oxides
  • Semiconductor Devices
  • Semiconductors
  • Solid State Electronics
  • Substrates
  • Transistors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology