Preparation and Photoelectronic Properties of FeNbO4.

Abstract

The orthorhombic alpha-PbO2 phase of FeNbo4 was prepared and its photo-electronic properties measured: Sintered disks were shown to be n-type and gave a conductivity of 40 ohm-cm. Measurements of the photoresponse gave a flat-band potential between 0.1 and 0.4 V vs SCE at a pH of 8.5 and an optical band gap of 2.08(2) eV. Several higher-energy band gaps at 2.68(2), 2.94(2), 3.24(2) and 4.38(2) eV were also determined. There appears to be an enhancement of the quantum efficiency due to the presence of Fe06 active centers while retaining the fundamental characteristics of the (NbO6) octahedra. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jan 17, 1980
Accession Number
ADA080247

Entities

People

  • Aaron Wold
  • Bijan Khazai
  • Jacob Hormadaly
  • John Koenitzer
  • Kirby Dwight

Organizations

  • Brown University

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Weapons Technologies

DTIC Thesaurus Topics

  • Band Gaps
  • Band Structures
  • Band Theory Of Solids
  • Chemical Engineering
  • Chemistry
  • Energy Bands
  • Energy Gaps
  • Iron
  • Materials
  • Michigan
  • Military Research
  • New York
  • Quantum Efficiency
  • Rhode Island
  • United States
  • Universities
  • Virginia

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing