Glow Discharge Optical Spectroscopy of Ion Implanted Gallium Arsenide.
Abstract
An optical input system to an existing Glow Discharge Optical Spectroscopy (GDOS) apparatus was designed aiming to improve its sensitivity. The GDOS, unmodified, was used to obtain impurity concentration profiles of annealed and unannealed ion implanted gallium arsenide samples. Implant energy was 120 KeV. Silicon ions were implanted with fluences of 5X10 to the 14th ions/sq cm, 1X10 to the 15th ions/sq cm, and 5X10 to the 15th ions/sq cm. Magnesium ions were implanted with fluences of 3X10 to the 15th ions/sq cm. Silicon implanted samples were encapsulated with aluminum nitride (AlN) films using a sputtering deposition technique. Magnesium implanted samples were encapsulated with 1000A silicon nitride (Si3N4) films deposited by the plasma enhanced chemical vapor deposition (PECVD) method. Samples were sputtered in a low pressure argon filled quartz chamber. Light emitted from elements of interest was monitored. Light intensity was converted to impurity concentration by comparison to the light intensity emitted by a standard sample of the same element.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1979
- Accession Number
- ADA080413
Entities
People
- Suk Puangthum
Organizations
- Air Force Institute of Technology