The Effect of Dopant Transport Rate on Crystalline Damage in Silicon.

Abstract

Studies are described of the volatilization of hydrogen B2O3 species in control water vapor ambients and the reaction with silicon to form boron silicide which are used to control defects in the silicon. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jan 17, 1980
Accession Number
ADA080569

Entities

People

  • Joseph Stach
  • R. E. Tressler

Organizations

  • Pennsylvania State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Body Weight
  • Ceramic Materials
  • Crystal Defects
  • Diffusion
  • Electrical Engineering
  • Electronic Components
  • Engineering
  • Equations
  • Hydrogen
  • Military Research
  • Oxidation
  • Pennsylvania
  • Transition Temperature
  • Vapor Pressure
  • Vapors
  • Water Vapor

Readers

  • Control Systems Engineering.
  • Materials Science and Engineering.
  • Spectroscopy.