Indium Phosphide for High Frequency Power Transistors.

Abstract

Technology development is presented for the development of an InP power Field Effect Transistor. Both ion implantation and vapor phase epitaxy results are presented as a means for providing an active channel. Processing technology (etching, ohmic contacts) is reviewed as well as a description of various approaches for gating n-type InP. Conclusions and plans for the last phase of the program are discussed. As a result of the first part of the program, work is to be concentrated on developing Junction Field Effect Transistor technology.

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Document Details

Document Type
Technical Report
Publication Date
Sep 28, 1979
Accession Number
ADA080583

Entities

People

  • G. W. Eldridge
  • M. C. Driver
  • R. C. Clarke
  • V. L. Wrick

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Alcohols
  • Diodes
  • Electrical Properties
  • Electron Mobility
  • Fabrication
  • Field Effect Transistors
  • Implantation
  • Ion Implantation
  • Ions
  • Materials
  • Measurement
  • Metal-Semiconductor Junctions
  • P-N Junctions
  • Phase
  • Semiconductors
  • Transistors
  • Vapor Phases

Fields of Study

  • Materials science

Readers

  • Business Analytics
  • Electronics Engineering
  • Thin Film Deposition Science.