Monolithic Integration of Microwave GaAs Power FETs.

Abstract

Efforts during the second year of this contract have included ivestigations of monolithic integration of GaAs power field effect transistors (FETs) at X-band microwave frequencies and incorporation of on-chip matching using lumped elements and coplanar ground metallization for monolithic FET circuit design. Two monolithic circuits have been investigated - a push-pull two-stage amplifier on a 2.0 x 2.0 mm chip, and a three-transistor paraphase amplifier on a 2.0 x 2.4 mm chip. Results for the two-stage push-pull amplifier include 1.4 W with 12.4 dB gain at 9.0 GHz. To provide the necessary 180 deg. out-of-phase signals for the push-pull devices, 180 deg. hybrid rings fabricated on alumina substrates are used. Fabrication of the paraphase amplifier, which is intended to replace the input 180 deg. hybrid ring, and preliminary evaluation of these chips have also been done. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Nov 01, 1979
Accession Number
ADA080793

Entities

People

  • R. E. Williams
  • V. N. Sokolov

Organizations

  • Texas Instruments

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Amplifiers
  • Fabrication
  • Field Effect Transistors
  • Frequency
  • Impedance
  • Measurement
  • Microwave Frequency
  • Military Research
  • Power Amplifiers
  • Push Pull Amplifiers
  • Resonant Frequency
  • Test And Evaluation
  • Test Fixtures
  • Transistor Amplifiers
  • Transistors
  • Transmission Lines
  • X Band

Readers

  • Electrical Engineering
  • Integrated Circuit Design and Technology.
  • Materials Science and Engineering.