III-V Heterostructure Avalanche Photodiode Modules for Fiber Optic Communication Links in the 1.0 to 1.3 Micrometer Spectral Range.
Abstract
The increased leakage current in InGaAsP APDs near breakdown is found to be a rather uniform bulk property, not associated wiht conventional microplasmas, dislocations, or surface effects. Surface effects were eliminated by the fabrcation of guard ring APDs, but the increased leakage current persisted. Surface effects were further ruled out by a statistical study of a large sample of APDs, which showed conclusively that the APD leakage current is proportional to diode area, not perimeter. Attempts to overcome the leakage current problem are still being made. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1979
- Accession Number
- ADA081185
Entities
People
- R. Yeats