III-V Heterostructure Avalanche Photodiode Modules for Fiber Optic Communication Links in the 1.0 to 1.3 Micrometer Spectral Range.

Abstract

InGaAsP APDs have been fabricated with uniform high-speed gains up to 42 and quantum efficiencies up to 70% at 1.28 micrometers. At high gains increased leakage current leads to excessive shot noise and gain saturation. Noise measurements indicate that the increased leakage current arises from a uniformly multiplied but increasing value of the primary (i.e., premultiplication) leakage current. To try to reduce this leakage current, various procedures for fabricating guard ring APDs have been studied. Preliminary guard ring structures have demonstrated guard ring isolation by exhibiting avalanche gain in the central region only. However, these initial guard ring APDs need further development before a meaningful comparison can be made to APDs without guard rings. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1979
Accession Number
ADA081747

Entities

People

  • R. Yeats
  • S. H. Chiao

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Avalanche Photodiodes
  • Band Gaps
  • Contracts
  • Detection
  • Detectors
  • Diodes
  • Efficiency
  • Electronics
  • Electronics Laboratories
  • Guard Rings
  • Measurement
  • Military Research
  • P-N Junctions
  • Photodiodes
  • Quantum Efficiency
  • Semiconductor Devices
  • Semiconductors

Readers

  • Linear Algebra
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Quantum Computing