Liquid Phase Epitaxial Growth of Gallium Arsenide

Abstract

This report discusses two methods of liquid phase epitaxial (LPE) growth applied to the compound semi-conductor gallium arsenide, and develops a mathematical description for each using a diffusion-limited model. The properties of the epitaxial layers grown under various experimental conditions are discussed, and the observed growth rates compared with those predicted by the mathematical models. From the differences observed, it is concluded that processes additional to simple diffusion of solute through the melt are occurring. Convective mixing caused by horizontal temperature gradients within the melt is suggested as an explanation for these differences.

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Document Details

Document Type
Technical Report
Publication Date
Aug 01, 1979
Accession Number
ADA081835

Entities

People

  • M. Folkard

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Classification
  • Crystal Growth
  • Diffusion
  • Epitaxial Growth
  • Gallium
  • Gallium Arsenides
  • Heat Transfer
  • Liquid Phases
  • Liquids
  • Mathematical Models
  • Models
  • Phase
  • Security
  • Temperature Gradients
  • Thin Films
  • Transition Temperature

Fields of Study

  • Materials science

Readers

  • Electronics Engineering
  • Fluid Dynamics.
  • Materials Science and Engineering.

Technology Areas

  • Microelectronics