Single Crystal Epitaxy and Characterization of beta-Silicon Carbide.

Abstract

The project involves the development of low pressure chemical vapor deposition and r-f sputtering techniques for the synthesis of single crystal thin films of beta-SiC. The CVD apparatus is being produced in-house and a detailed description of the design is provided herein. Theoretical CVD phase diagrams of the Si-C-H system are also being produced as a function of Si/Si+C and total pressure. Both reactive sputtering of Si in CH4 and normal sputtering of a SiC target are being readied. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jan 25, 1980
Accession Number
ADA082036

Entities

People

  • Robert F Davis

Organizations

  • North Carolina State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Ceramic Materials
  • Chemical Reactions
  • Chemical Vapor Deposition
  • Chemistry
  • Computer Programs
  • Epitaxial Growth
  • Films
  • Flow Rate
  • High Temperature
  • Mass Transfer
  • Materials
  • Materials Science
  • Phase Diagrams
  • Phase Transformations
  • Semiconductors
  • Silicon Carbide
  • Thin Films

Fields of Study

  • Materials science

Readers

  • Combustion science or combustion engineering.
  • Thin Film Deposition Science.