Epitaxial Growth of Semi-Insulating GaAs
Abstract
This program was aimed at the study of epitaxial growth of high- resistivity GaAs, high-energy implantation of donors into GaAs, and the use of high-power lasers for annealing implanted GaAs layers. We have made significant progress in these three areas. We have grown high-resistivity Cr-doped GaAs layers with good surface morphology using both Ga/Hcl/AsH3/H2 and Ga/AsCl3/H2 processes. n-Layers grown on epitaxial buffer layers have consistently shown lower compensation than direct growth on SI GaAs substrates. Cr doped layers have been grown on both SI GaAs and n + or - GaAs substrates. Ion implantation into epitaxial buffer layers, in general, leads to higher electron mobility than direct implantation.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1980
- Accession Number
- ADA082163
Entities
People
- C. P. Wu
- C. W. Magee
- E. C. Douglas
- S. G. Liu
- S. T. Jolly
Organizations
- Sarnoff Corporation