Research on Low Temperature, Directed Energy Processing of Very Large Scale Integrated Structures.

Abstract

The goal of this research program is to demonstrate processing techniques which can eliminate the need for high thermal cycling of silicon wafers in fabricating very large scale integrated (VLSI) devices. Maintaining low temperatures for all processing reduces plastic deformation, diffusion and autodoping problems which would limit the application of submicron geometry design rules. Pulsed electron beam surface heating of the top micron of material is being investigated for annealing of ion-implantation damage and epitaxial regrowth of low temperature chemical-deposition (CVD) polycrystalline silicon films. Research to date has demonstrated the epitaxial regrowth of 0.1 to 0.5 micron films deposited at 600 to 800 C, with and without etching the native oxide on the substrate.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1980
Accession Number
ADA082338

Entities

People

  • Anton Greenwald

Tags

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Crystal Lattices
  • Crystal Structure
  • Crystals
  • Diffraction
  • Electron Beams
  • Electronics Industry
  • Epitaxial Growth
  • Field Effect Transistors
  • Geometry
  • High Temperature
  • Ion Implantation
  • Lasers
  • Materials
  • Metal-Semiconductor Junctions
  • Schottky Diodes
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Integrated Circuit Design and Technology.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition
  • Microelectronics
  • Microelectronics - Graphene