A Theory of Glassy Semiconductors.

Abstract

A model for glassy semiconductors is discussed which provides for a generic description of a wide range of materials. The theory is based on the premise that the under lying disorder of the amorphous state requires a qualitatively different description. The major consequence of the lack of long-range structural symmetry is the enhancement of the electron-phonon interaction and the localization of eigenstates. Strong enough interaction leads to an effective attraction between localized electrons which accounts for both diamagnetism and optical transparency. The excitations on the ground state are derived and consideration of their relaxation leads to the existence of long lived states in a narrow region of the spectrum near the Fermi level. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1980
Accession Number
ADA082848

Entities

People

  • D. C. Licciardello

Organizations

  • Princeton University

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Absorption
  • Electron Mobility
  • Electrons
  • Energy
  • Energy Bands
  • Energy Gaps
  • Excitation
  • Fermi Levels
  • Ground State
  • Materials
  • Metastable State
  • Military Research
  • Optical Properties
  • Particle Spectra
  • Particles
  • Semiconductors
  • Spectra

Fields of Study

  • Physics

Readers

  • Materials Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Systems Analysis and Design

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene